RAS PhysicsЖурнал экспериментальной и теоретической физики Journal of Experimental and Theoretical Physics

  • ISSN (Print) 0044-4510
  • ISSN (Online) 3034-641X

FREQUENCY DEPENDENCE OF VACANCY MOVEMENT HYSTERESIS IN A CLOSED MEMRISTOR BASED ON AN EXACTLY SOLVABLE MODEL OF CONTROLLED NONLINEAR DIFFUSION

PII
10.31857/S0044451024120095-1
DOI
10.31857/S0044451024120095
Publication type
Article
Status
Published
Authors
Volume/ Edition
Volume 166 / Issue number 6
Pages
858-867
Abstract
The frequency dependence of vacancy movement hysteresis in a memristor closed on both sides under the influence of periodic electric current flowing through the memristor is considered. Based on an exactly solvable nonlinear model, an equation for hysteresis loops during the passage of rectangular current pulses with a duty cycle of 2 is obtained. The efficiency of vacancy charge transfer by current compared to their free diffusion is evaluated. It is shown that maximum efficiency is achieved at a specific memristor switching period, which depends on the amplitude of the applied current. Analytical asymptotics of this dependence and memristor resistance depending on the amplitude and period of the current passing through the memristor are obtained.
Keywords
Date of publication
16.09.2025
Year of publication
2025
Number of purchasers
0
Views
3

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