- PII
- 10.31857/S0044451024090074-1
- DOI
- 10.31857/S0044451024090074
- Publication type
- Article
- Status
- Published
- Authors
- Volume/ Edition
- Volume 166 / Issue number 3
- Pages
- 374-382
- Abstract
- Lateral spin devices with tunnel contacts Co0.9Fe0.1/MgO/InSb were fabricated using magnetron sputtering and maskless photolithography. The current-voltage characteristics and contact resistance, as well as the Hanle effect during the diffusion of polarized electrons between contacts, were measured. First-principles molecular dynamics calculations were performed to determine the band structure in supercells modeling the Co/MgO and MgO/InSb interfaces. It was shown that at the Co/MgO interface, a significant spin polarization arises for Bloch states of electrons. As a result, the probabilities of passing through the dielectric layer and through the ferromagnetic/dielectric and dielectric/semiconductor interfaces are different for these electrons. The height and width of the tunnel barriers were calculated based on an analysis of the current-voltage characteristics of the tunnel contacts. It was shown that a higher degree of polarization is achieved in tunnel contacts with higher barrier heights and higher resistance. It was also shown that at the MgO/InSb interface, due to the large difference in lattice parameters, there is a high likelihood of defect formation, which prevents achieving high polarization characteristics of the tunnel contacts.
- Keywords
- Date of publication
- 16.09.2025
- Year of publication
- 2025
- Number of purchasers
- 0
- Views
- 68
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