- PII
- 10.31857/S0044451024010061-1
- DOI
- 10.31857/S0044451024010061
- Publication type
- Article
- Status
- Published
- Authors
- Volume/ Edition
- Volume 165 / Issue number 1
- Pages
- 51-64
- Abstract
- Kinetic model for composition formation in the anionic sublattice of the GaPxAs1-x solid solution during MBE on the (001) vicinal surface from As2 and P2 beam is proposed. The model was based on a twodimensional layered growth mechanism according to which terraces with a reconstructed surface are successively build up in growth areas localized in step kinks. The elementary mass transfer processes in the growth areas, on the terrace surfaces and their edges were considered. The model kinetic constants were determined by comparing the calculated values of x with experimental data. The impact of the substrate temperature, growth rate, and surface misorientation angle value on the solid solution composition is explained by exchange processes in the anionic layer on the surface and edges of terraces located outside growth areas.
- Keywords
- molecular beam epitaxy A<sup>III</sup>B<sup>V</sup> solid solutions GaP<sub>x</sub>As<sub>1-x</sub> kinetic model
- Date of publication
- 17.09.2025
- Year of publication
- 2025
- Number of purchasers
- 0
- Views
- 69
References
- 1. S. Martini, A. A. Quivy, A. Tabata, and J.R.Leite, Vac. Sci. Techn. B 18, 1991 (2000), doi: 10.1116/1.1303851.
- 2. R. K. Tsui, J. A. Curless, G. D. Kramer, and M.S.Peffley, Jpn. J. Appl. Phys. 58, 2570 (1985), doi:10.1063/1.335884.
- 3. Ю. Б. Болховитянов, О. П. Пчеляков, УФН 178, 459 (2008), doi: 10.3367/UFNr.0178.200805b.0459.
- 4. K. Mochizuki and T. Nishinaga, Jpn. J. Appl. Phys.27, 1585 (1988), doi:10.1143/JJAP.27.1585.
- 5. J. R. Arthur, Surf. Sci. 43, 449 (1974), doi: 10.1116/1.1317818.
- 6. C. T. Foxon and B. A. Joyce, Surf. Sci. 64, 293 (1977), doi:10.1016/0039-6028(77)90273-4.
- 7. K. Ploog, Ann. Rev. Mater. Sci. 11, 171 (1981), doi:10.1146/annurev.ms.11.080181.001131.
- 8. J. M. Van Hove, P. J. Cohen, and J. Vac. Sci. Technol.20, 726 (1982), doi: 10.1063/1.96017.
- 9. C. E. C. Wood, C. R. Stanley, G. W. Wicks, and M. B. Esi, J.Appl. Phys. 54, 1868 (1983), doi: 10.1063/1.332239.
- 10. Y. H. Wang, W. C. Liu, C. Y. Chang, and S.A.Liao, J. Vac. Sci. Technol. B 4(1), 30 (1986), doi: 10.1116/1.583319.
- 11. T. Nomura, H. Ogasawara, M. Miyao, and M. Hagino,J. Crystal Growth 111, 61 (1991), doi: 10.1016/00220248(91)90947-4.
- 12. S. Yu. Karpov and M. A. Maiorov, Surf. Sci. 393, 108 (1997), doi: 10.1016/S0039-6028(97)00563-3.
- 13. E. S. Tok, J. H. Neave, F. E. Allegretti, J. Zhang,T.S.Jones, and B. A. Joyce, Surf. Sci. 371, 277 (1997), doi: 10.1016/S0039-6028(96)01085-0.
- 14. Yu. G. Galitsyn, S. P. Moshchenko, and A.S.Suranov, Phys. Low-Dim. Struct. 7/8, 81 (1998).
- 15. Е. А. Емельянов, М. А. Путято, Б .Р. Семягин,Д.Ф.Феклин, В. В. Преображенский, ФТП 49, 163 (2015).
- 16. R. Heckingbottom, G. J. Davies, and K. A. Prior, Surf. Sci. 132, 375 (1983), doi: 10.1016/00396028(83)90548-4.
- 17. R. Heckingbottom, J. Vac. Sci. Technol. B 3, 572 (1985), doi: 10.1116/1.583182.
- 18. H. Seki and A. Koukitu, J. Cryst. Growth 78, 342 (1986), doi: 10.1016/0022-0248(86)90070-9.
- 19. П. С. Копьев, Н. Н. Леденцов, ФТП 22, 1729 (1988).
- 20. S. V. Ivanov, P. D. Altukhov, T. S. Argunova,A.A.Bakun, A. A. Budza, V. V. Chaldyshev, Yu.A.Kovalenko, P. S.Kop’ev, R. N. Kutt, B.Ya.Meltser, S. S. Ruvimov, S. V. Shaposhnikov, L. M. Sorokin, and V. M. Ustinov, Semicond. Sci. Technol. 8, 347 (1993), doi: 10.1088/02681242/8/3/008.
- 21. А. Ю. Егоров, А. Р. Ковш, А. Е. Жуков, В.М.Устинов, П. С. Копьев, ФТФ 31, 1153 (1997), doi:10.1134/1.1187033.
- 22. В. В. Преображенский, В. П. Мигаль, Д. И. Лу-бышев, Поверхность. Физика, химия, механика 9, 156 (1989).
- 23. В. В. Преображенский, М. А. Путято, Б. Р. Семя-гин, ФТП 36, 897 (2002).
- 24. Y. Tatsuoka, H. Kamimoto, T. Kitada, S.Shimomura, and S. Hiyamizu, J. Vac. Sci. Technol. B 18, 1549 (2000), doi: 10.1116/1.591424.
- 25. C. T. Foxon, B. A. Joyce, and M. T. Norris,J.Gryst. Growth. 49, 132 (1980), doi: 10.1016/00220248(80)90073-1.
- 26. B. W. Liang and C. W. Tu, J. Appl. Phys. 72, 2806 (1992), doi: 10.1063/1.351532.
- 27. T. Shitara, D. D. Vvedensky, M. R. Wilby, J. Zhang,J. H. Neave, and B. A. Joyce, Phys. Rev. B 46, 6825 (1992), doi: 10.1103/physrevb.46.6825.
