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FABRICATION AND STUDY OF THE p − Si/α − Si/Ag MEMRISTOR CROSSBAR ARRAY

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Код статьи
S004445102408011X-1
DOI
10.31857/S004445102408011X
Тип публикации
Статья
Статус публикации
Опубликовано
Авторы
Samsonova A.
  • Аффилиация:
Том/ Выпуск
Том 166 / Номер выпуска 2
Страницы
255-260
Аннотация
We study the formation of the conductive channels in α-Si memristors and demonstrate their operation in the crossbar array. The latter can be utilised as the basic component of the neuromorphic chip tailored for edge computing. The conductive channels in α-Si are formed by the migration of Ag along with Cu ions. Such a channel has switching current-voltage characteristics at high bias, Vbias > 2V, and highly non-linear that at low bias, Vbias < 0.5V. Memristor can be re-programmed to different resistance states with short voltage pulses of amplitude above 2 V. We demonstrate the programming of the memristor crossbar array and its operation in vector-by-matrix multiplication with an 87% accuracy.
Ключевые слова
Дата публикации
26.07.2025
Всего подписок
0
Всего просмотров
47

Библиография

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