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ZAKhVAT ELEKTRONOV I DYROK NA SOSTOYaNIYa VAKANSIY RTUTI S ISPUSKANIEM ODINOChNOGO OPTIChESKOGO FONONA PRI REKOMBINATsII ShOKLI– RIDA–KhOLLA V UZKOZONNYKh TVERDYKh RASTVORAKh HgCdTe

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PII
S0044451024060117-1
DOI
10.31857/S0044451024060117
Publication type
Article
Status
Published
Authors
A. A. Yantser
  • Affiliation:
M. V. Kozlova
  • Affiliation:
Volume/ Edition
Volume 165 / Issue number 6
Pages
840-847
Abstract
Расчитано время рекомбинации Шокли – Рида – Холла (ШРХ) при захвате носителей заряда на состояния вакансии ртути в твердых растворах HgCdTe с шириной запрещенной зоны около 40 мэВ. В рассматривемом случае захват как электрона, так и дырки возможен за счет испускания одного оптического фонона. Установлено, что при T = 4.2 и 77 К рекомбинация ШРХ определяет общее время жизни носителей в материале p-типа при концентрации центров рекомбинации более 2・1015 см−3, что позволяет управлять временем жизни носителей за счет изменения концентрации вакансий ртути.
Keywords
Date of publication
26.07.2025
Number of purchasers
0
Views
41

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