<article xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" article-type="research-article" dtd-version="1.2" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">Journal of Experimental and Theoretical Physics</journal-id><journal-title-group><journal-title>Journal of Experimental and Theoretical Physics</journal-title></journal-title-group><issn publication-format="print">0044-4510</issn><issn publication-format="electronic">3034-641X</issn><publisher><publisher-name>Russian Academy of Science</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.31857/S0044451023120180</article-id><title-group><article-title>Thermoelectric Power and Hall Effect in Correlated Metals and Doped Mott–Hubbard Insulators: DMFT Approximation</article-title><trans-title-group xml:lang="ru"><trans-title>Термоэдс и эффект Холла в коррелированных металлах и допированных мотт-хаббардовских диэлектриках: DMFT-приближение</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author"><contrib-id contrib-id-type="orcid"></contrib-id><name-alternatives><name xml:lang="en"><surname>Kuchinskiy</surname><given-names>E. Z</given-names></name><name xml:lang="ru"><surname>Кучинский</surname><given-names>Э. З </given-names></name></name-alternatives><email>kuchinskiy_e_z_noemail@ras.ru</email><xref ref-type="aff" rid="aff-1"></xref><xref ref-type="aff" rid="aff-2"></xref></contrib><contrib contrib-type="author"><contrib-id contrib-id-type="orcid"></contrib-id><name-alternatives><name xml:lang="en"><surname>Kuleeva</surname><given-names>N. A</given-names></name><name xml:lang="ru"><surname>Кулеева</surname><given-names>Н. А </given-names></name></name-alternatives><email>kuleeva_n_a_noemail@ras.ru</email><xref ref-type="aff" rid="aff-3"></xref></contrib><contrib contrib-type="author"><contrib-id contrib-id-type="orcid"></contrib-id><name-alternatives><name xml:lang="en"><surname>Sadovskiy</surname><given-names>M. V</given-names></name><name xml:lang="ru"><surname>Садовский</surname><given-names>М. В </given-names></name></name-alternatives><email>sadovskiy_m_v_noemail@ras.ru</email><xref ref-type="aff" rid="aff-5"></xref></contrib></contrib-group><aff-alternatives id="aff-1"><aff><institution xml:lang="ru">Институт электрофизики Уральского отделения Российской академии наук</institution><institution xml:lang="en">Institute for Electrophysics, Ural Branch, Russian Academy of Sciences</institution></aff></aff-alternatives><aff-alternatives id="aff-2"><aff><institution xml:lang="ru"></institution><institution xml:lang="en"></institution></aff></aff-alternatives><aff-alternatives id="aff-3"><aff><institution xml:lang="ru">Институт электрофизики Уральского отделения Российской академии наук</institution><institution xml:lang="en">Institute for Electrophysics, Ural Branch, Russian Academy of Sciences</institution></aff></aff-alternatives><aff-alternatives id="aff-5"><aff><institution xml:lang="ru">Институт электрофизики Уральского отделения Российской академии наук</institution><institution xml:lang="en">Institute for Electrophysics, Ural Branch, Russian Academy of Sciences</institution></aff></aff-alternatives><pub-date date-type="pub" iso-8601-date="2023-12-01" publication-format="electronic"><day>01</day><month>12</month><year>2023</year></pub-date><volume>164</volume><issue>6</issue><fpage>1056</fpage><lpage>1069</lpage><abstract xml:lang="en"><p>We present comparative theoretical investigation of thermoelectric power and Hall effect in the Hubbard model for correlated metal and Mott insulator (considered as prototype cuprate superconductor) for different concentrations of current carriers. Analysis is performed within standard DMFT approximation. For Mott insulator we consider the typical case of partial filling of the lower Hubbard band (hole doping). We calculate the dependence of thermopower on doping level and determine the critical concentration of carriers corresponding to sign change of thermopower. An anomalous dependence of thermopower on temperature is obtained significantly different from linear temperature dependence typical for the usual metals. The role of disorder scattering is analyzed on qualitative level. The comparison with similar studies of the Hall effect shows, that breaking of electron-hole symmetry leads to the appearance of the relatively large interval of band-fillings (close to the half-filling) where thermopower and Hall effects have different signs. We propose a certain scheme allowing to determine the number of carriers from ARPES data and perform semi-quantitative estimate of both thermopower and Hall coefficient using the usual DFT calculations of electronic spectrum.</p></abstract><trans-abstract xml:lang="ru"><p>Проведено сравнительное теоретическое исследование термоэдс и эффекта Холла в модели Хаббарда для коррелированного металла и моттовского диэлектрика (рассматриваемого в качестве прототипа купратного сверхпроводника) для разных концентраций носителей тока. Анализ проведен в рамках стандартного DMFT-приближения. Для моттовского диэлектрика в качестве типичного допирования рассматривается случай частичного заполнения нижней хаббардовской зоны дырками. Рассчитана зависимость термоэдс от степени такого допирования и определено значение критической концентрации носителей, при которой происходит смена знака термоэдс. Получена аномальная зависимость термоэдс от температуры, существенно отличающаяся от линейной температурной зависимости, характерной для обычных металлов. Качественно анализируется роль рассеяния на беспорядке. Сравнение с результатами аналогичного исследования эффекта Холла показало, что нарушение электрон-дырочной симметрии приводит к появлению достаточно широкой области заполнений вблизи половинного, где термоэдс и коэффициент Холла имеют разные знаки. Предложена схема, позволяющая по данным ARPES получать число носителей заряда и проводить полуколичественную оценку коэффициента Холла и термоэдс с использованием обычных DFT-расчетов электронного спектра.</p></trans-abstract></article-meta></front><body></body><back><ref-list><ref id="B1"><label>B1</label><citation-alternatives><mixed-citation xml:lang="ru">Th. Pruschke, M. Jarrell, and J. K. Freericks, Adv. 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