<article xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" article-type="research-article" dtd-version="1.2" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">Journal of Experimental and Theoretical Physics</journal-id><journal-title-group><journal-title>Journal of Experimental and Theoretical Physics</journal-title></journal-title-group><issn publication-format="print">0044-4510</issn><issn publication-format="electronic">3034-641X</issn><publisher><publisher-name>Russian Academy of Science</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.31857/S0044451023040156</article-id><title-group><article-title>Compressibility, Metallization, and Relaxation in Nonstoichiometric Chalcogenide Glass g-As3Te2 at High Hydrostatic Pressure versus “Classic” g-As2Te3 Glass</article-title><trans-title-group xml:lang="ru"><trans-title>Сжимаемость, металлизация и процессы релаксации в халькогенидном стекле нестехиометрического состава g- As3Te2 при высоких гидростатических давлениях: сравнение с &quot;классическим&quot; стеклом g- As2Te3</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author"><contrib-id contrib-id-type="orcid"></contrib-id><name-alternatives><name xml:lang="en"><surname>Tsiok</surname><given-names>O. B</given-names></name><name xml:lang="ru"><surname>Циок</surname><given-names>О. Б </given-names></name></name-alternatives><email>tsiok_o_b_noemail@ras.ru</email><xref ref-type="aff" rid="aff-1"></xref><xref ref-type="aff" rid="aff-2"></xref></contrib><contrib contrib-type="author"><contrib-id contrib-id-type="orcid"></contrib-id><name-alternatives><name xml:lang="en"><surname>Brazhkin</surname><given-names>V. V</given-names></name><name xml:lang="ru"><surname>Бражкин</surname><given-names>В. В </given-names></name></name-alternatives><email>brazhkin_v_v_noemail@ras.ru</email><xref ref-type="aff" rid="aff-3"></xref></contrib><contrib contrib-type="author"><contrib-id contrib-id-type="orcid"></contrib-id><name-alternatives><name xml:lang="en"><surname>Bychkov</surname><given-names>E. V</given-names></name><name xml:lang="ru"><surname>Бычков</surname><given-names>Е. В </given-names></name></name-alternatives><email>bychkov_e_v_noemail@ras.ru</email><xref ref-type="aff" rid="aff-5"></xref></contrib><contrib contrib-type="author"><contrib-id contrib-id-type="orcid"></contrib-id><name-alternatives><name xml:lang="en"><surname>Tver&amp;apos;yanovich</surname><given-names>A. S</given-names></name><name xml:lang="ru"><surname>Тверьянович</surname><given-names>А. С </given-names></name></name-alternatives><email>tver&amp;apos;yanovich_a_s_noemail@ras.ru</email><xref ref-type="aff" rid="aff-7"></xref></contrib></contrib-group><aff-alternatives id="aff-1"><aff><institution xml:lang="ru">Институт физики высоких давлений Российской академии наук</institution><institution xml:lang="en">Vereshchagin Institute for High Pressure Physics, Russian Academy of Sciences</institution></aff></aff-alternatives><aff-alternatives id="aff-2"><aff><institution xml:lang="ru"></institution><institution xml:lang="en"></institution></aff></aff-alternatives><aff-alternatives id="aff-3"><aff><institution xml:lang="ru">Институт физики высоких давлений Российской академии наук</institution><institution xml:lang="en">Vereshchagin Institute for High Pressure Physics, Russian Academy of Sciences</institution></aff></aff-alternatives><aff-alternatives id="aff-5"><aff><institution xml:lang="ru">LPCA, UMR 8101 CNRS, Universite du Littoral</institution><institution xml:lang="en">LPCA, UMR 8101 CNRS, Universite du Littoral</institution></aff></aff-alternatives><aff-alternatives id="aff-7"><aff><institution xml:lang="ru">Санкт-Петербургский государственный университет</institution><institution xml:lang="en">St. Petersburg State University, Institute of Chemistry</institution></aff></aff-alternatives><pub-date date-type="pub" iso-8601-date="2023-04-01" publication-format="electronic"><day>01</day><month>04</month><year>2023</year></pub-date><volume>163</volume><issue>4</issue><fpage>585</fpage><lpage>596</lpage><abstract xml:lang="en"><p>The volume and conductivity of nonstoichiometric chalcogenide glass g-As3Te2 have been investigated at high hydrostatic pressures (up to 8.5 GPa), and results have been compared with earlier data for stoichiometric chalcogenide glass g-As2Te3. Structural and Raman studies of g-As3Te2 glass have revealed a greater significance of As–As pair correlations in the range of medium-range order compared with “classic” chalcogenide glass g-As2Te3. Even at such a large excess of arsenic, a high concentration of “improper” Te–Te neighbors has been observed because of chemical disorder. Under normal conditions, the thermal gap (0.43–0.48 eV) and resistivity (>104 Ω cm) of glass g-As3Te2 are greater than those of g-As2Te3. The elastic behavior of g-As3Te2 glass, as well as of g-As2Te3, under compression has been observed at pressures up to 1 GPa, the initial values of bulk moduli for these glasses being nearly coincident. Polyamorphic transformation in g-As3Te2 (with softening of relaxing bulk modulus) is more diffuse and extends to higher pressures (from 1.5 to 4.0 GPa). The metallization process in g-As3Te2 is also more diffuse: metallic conductivity is reached at pressures of 5.5–6.0 GPa. As in the case of the stoichiometric glass, the baric dependences of the bulk modulus exhibit a kink in the pressure range 4–5 GPa. Up to maximal pressures, the volume and resistivity relax logarithmically in time with roughly the same rate as in the case of g-As2Te3. The residual densification of g-As3Te2 after pressure release is roughly twice as high as for g-As2Te3 and equals 3.5%, the conductivity of the compacted glass is about three orders of magnitude higher than that of the as-prepared sample. Under normal conditions, a considerable relaxation of the volume and resistivity has been observed. As for densified g-GeS2 glass, the logarithmic kinetics of this relaxation has been successfully described in terms of our earlier model based on the concept of relaxation self-organized criticality with the activation energy (1.3 eV) remaining unchanged up to 5 × 106 s.</p></abstract><trans-abstract xml:lang="ru"><p>Выполнены прецизионные исследования объема и электросопротивления стекла нестехиометрического состава g-As3Te2 при высоких гидростатических давлениях до 8.5 ГПа и проведено сравнение с ранее полученными результатами для стехиометрического стекла g-As2Te3. Структурные и рамановские исследования стекла g-As3Te2 показывают более существенную роль корреляций пар As-As в области промежуточного порядка по сравнению с «классическим» стеклом g-As2Te3. Высокий химический беспорядок приводит к тому, что даже при таком переизбытке атомов мышьяка наблюдается большая концентрация«неправильных» соседей Te-Te. Стекло g-As3Te2 имеет несколько большую величину термической щели (0.43-0.48 эВ) и большее значение сопротивления при нормальных условиях (> 104 Ом·см) по сравнению с g-As2Te3. Как и для g-As2Te3, упругое поведение стекла g-As3Te2 при сжатии наблюдается при давлениях до 1 ГПа, причем начальные величины модуля объемного сжатия для этих стекол практически совпадают. Полиаморфное превращение со смягчением релаксирующего модуля сжатия в g-As3Te2 более размыто и затянуто в область более высоких давлений (от 1.5 до 4 ГПа). Процесс металлизации для g-As3Te2 также более размыт, металлический уровень проводимости достигается при давлениях 5.5-6.0 ГПа. Как и для стехиометрического стекла, на барических зависимостях модуля сжатия наблюдается излом при давлениях 4-5 ГПа. Для объема и для электросопротивления вплоть до максимальных давлений наблюдается логарифмическая по времени релаксация примерно той же интенсивности, что и для g-As2Te3. Остаточное уплотнение в стекле g-As3Te2 после сброса давления превышает таковое для g-As2Te3 почти в два раза и составляет 3.5%, а проводимость уплотненного стекла почти на три порядка величины выше чем у исходного. При нормальных условиях наблюдается существенная релаксация объема и электросопротивления. Как и для уплотненного стекла g-GeS2, логарифмическую кинетику этой релаксации удается описать в рамках ранее предложенной нами модели, основанной на представленияхo «самоорганизованной критичности» процесса релаксации, причем сама энергия активации (1.3 эВ) остается постоянной во всем исследованном диапазоне времен до 5 · 106 с.</p></trans-abstract></article-meta></front><body></body><back><ref-list><ref id="B1"><label>B1</label><citation-alternatives><mixed-citation xml:lang="ru">M. Wuttig and N. Yamada, Nat. 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