Journal of Experimental and Theoretical PhysicsJournal of Experimental and Theoretical Physics0044-45103034-641XRussian Academy of Science10.31857/S0044451024060105QUANTUM TRANSPORT THROUGH THE GRAPHENE-SILICENE NANORIBBONS JUNCTIONQUANTUM TRANSPORT THROUGH THE GRAPHENE-SILICENE NANORIBBONS JUNCTIONNajarsadeghiM.NajarsadeghiM. najarsadeghi_m_noemail@ras.ruFouladiA. A.FouladiA. A. fouladi_a_a_noemail@ras.ruRostamiA. Z.RostamiA. Z. rostami_a_z_noemail@ras.ruPahlavanA.PahlavanA. pahlavan_a_noemail@ras.ruDepartment of Physics, Sari Branch, Islamic Azad UniversityDepartment of Physics, Sari Branch, Islamic Azad UniversityDepartment of Physics, Sari Branch, Islamic Azad UniversityDepartment of Physics, Sari Branch, Islamic Azad University010620241656833839

In this paper, the quantum transport through armchair graphene-silicene nanoribbons junction has been investigated by using non-equilibrium Green’s function method and tight binding approximation in Landauer-Büttiker formalism. The results demonstrate that this junction exhibits metallic behavior in the absence of intrinsic spinorbit interaction and by increasing the size of the intrinsic spin-orbit interaction, the transition from conductor to semiconductor for the system occurs. Moreover, the electron transport characteristics of the system can be controlled by changing the size of the length and width of the junction and the strength of GNR-SiNR coupling. These results can be useful for designing nanoelectronic devices.

In this paper, the quantum transport through armchair graphene-silicene nanoribbons junction has been investigated by using non-equilibrium Green’s function method and tight binding approximation in Landauer-Büttiker formalism. The results demonstrate that this junction exhibits metallic behavior in the absence of intrinsic spinorbit interaction and by increasing the size of the intrinsic spin-orbit interaction, the transition from conductor to semiconductor for the system occurs. Moreover, the electron transport characteristics of the system can be controlled by changing the size of the length and width of the junction and the strength of GNR-SiNR coupling. These results can be useful for designing nanoelectronic devices.

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